Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy
Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy
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金属有机分子束外延生长 (100)ZnSe/GaAs 表面自组织 CdSe 量子点
DOI：
10.1143/jjap.36.4097
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
N. Shimoyama
中科院分区：
文献类型：
--
作者：
M. Arita;A. Avramescu;K. Uesugi;I. Suemune;T. Numai;H. Machida;N. Shimoyama
用金属有机分子束外延（MOMBE）在GaAs衬底上生长了II-VI族半导体低维结构量子点。在异质外延生长之前，通过使用三-二甲氨基砷（TDMAAs）的高温As清洗来制备原子级平坦的As稳定的GaAs表面。用原子力显微镜（AFM）研究了沉积在（100）ZnSe/GaAs表面的CdSe薄膜，发现薄膜形成了尺寸分布均匀的三维岛状结构。在GaAs上赝晶生长的CdSe和ZnSe之间的晶格常数的大的失配（~7%）可能导致Stranski-Krastanov生长模式。在350°C下成功地形成了直径为97±11 nm的CdSe量子点。
II–VI semiconductor low-dimensional structures, quantum dots, have been grown on GaAs substrates by metalorganic molecular beam epitaxy (MOMBE). Before the heteroepitaxial growth, atomically flat, As-stabilized GaAs surfaces were prepared by high-temperature As cleaning using tris-dimethylamino-arsenic (TDMAAs). CdSe thin films deposited on (100)ZnSe/GaAs surfaces have been investigated with atomic force microscopy (AFM) and were found to form three-dimensional islands with rather uniform size distribution. A large mismatch (~7%) of lattice constants between CdSe and ZnSe pseudomorphically grown on GaAs possibly results in the Stranski-Krastanov growth mode. CdSe quantum dots with a diameter of 97±11 nm were successfully formed at 350°C.