Spin-Pump-Induced Spin Transport in p-Type Si at Room Temperature
Spin-Pump-Induced Spin Transport in p-Type Si at Room Temperature
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DOI：
10.1103/physrevlett.110.127201
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发表时间：
2013-03-18
影响因子：
8.6
通讯作者：
Shiraishi, Masashi
中科院分区：
文献类型：
--
作者：
Shikoh, Eiji;Ando, Kazuya;Shiraishi, Masashi
自旋电池的概念应用于纯自旋电流和自旋输运的p型硅（p-Si）的动态产生。Ni_（80）Fe_（20）中的铁磁共振和有效的s-d耦合导致Ni_（80）Fe_（20）/p-Si界面处的自旋积累，诱导p-Si中的自旋注入和自旋电流的产生。纯自旋电流通过蒸发到p-Si上的Pd的逆自旋霍尔效应转换为电荷电流。这种方法演示了室温下p型硅中纯自旋电流的产生和输运。DOI：10.1103/PhysRevLett.110.127201
A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature. DOI: 10.1103/PhysRevLett.110.127201