Synthesis of Large-Area GeS Thin Films with the Assistance of Pre-deposited Amorphous Nanostructured GeS Films: Implications for Electronic and Optoelectronic Applications
Synthesis of Large-Area GeS Thin Films with the Assistance of Pre-deposited Amorphous Nanostructured GeS Films: Implications for Electronic and Optoelectronic Applications
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DOI：
10.1021/acsanm.3c00669
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发表时间：
2023-04
影响因子：
5.9
通讯作者：
Qinqiang Zhang;R. Matsumura;N. Fukata
中科院分区：
文献类型：
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作者：
Qinqiang Zhang;R. Matsumura;N. Fukata
一硫化锗作为一种类似于黑磷的层状材料，最近使用物理气相传输过程在面积达几平方微米的层中合成。然而，单晶GeS往往稀疏、随意且离散地在目标基底上成核。这种现象迄今为止阻碍了应用的发展，因为它限制了晶体GeS薄膜的可获得尺寸。在这项研究中，我们研究了在不使用金属催化剂的情况下合成连续大面积 GeS 的不同加热配方。通过沉积预沉积的非晶纳米结构GeS薄膜，使用特制的蒸气传输设备可以获得平方厘米数量级的多晶GeS薄膜。该生长工艺可用于在不同基底（例如 SiO2/Si 或云母）上制造连续多晶 GeS 薄膜（1 cm × 1.5 cm）。观察到的多晶 GeS 薄膜的最小厚度约为 100 nm。在云母基板上合成的大面积 GeS 薄膜也可以轻松剥离并转移到选定的基板上，这使其在下一代电子和光电应用中具有巨大的潜力。该方法也可用于合成其他大面积硫属化物材料。
Germanium monosulfide as a layered material analogous to black phosphorus has recently been synthesized in layers up to several square micrometers in area using a physical vapor transport process. However, single-crystalline GeS tends to be sparsely, haphazardly, and discretely nucleated on the target substrate. This phenomenon has hitherto impeded the development of applications since it limits the obtainable size of crystalline GeS films. In this study, we investigate a different heating recipe for synthesizing continuous large-area GeS without the use of metal catalysts. By laying down a pre-deposited amorphous nanostructured GeS film, a polycrystalline GeS film of the order of square centimeters can be attained using a purpose-built vapor transport equipment. This growth process can be used to fabricate a continuous polycrystalline GeS film (1 cm × 1.5 cm) on different substrates such as SiO2/Si or mica. The observed minimum thickness of polycrystalline GeS films is around 100 nm. Large-area GeS films synthesized on a mica substrate can also be easily exfoliated and transferred onto chosen substrates, giving them significant potential for use in next-generation electronic and optoelectronic applications. This method may also be useful for synthesizing other large-area chalcogenide materials.