Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
复制标题
具有平面栅极的新型线晶体管结构，使用 2DEG 直接肖特基接触
DOI：
10.1143/jjap.34.1315
复制
发表时间：
1995
影响因子：
1.5
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
--
作者：
H. Okada;K. Jinushi;Nan;T. Hashizume;H. Hasegawa
本文报道了一种新型的AlGaAs/GaAs量子阱面内肖特基栅线晶体管结构。利用原位选择性电化学工艺形成与QW边缘的直接肖特基接触。晶体管制造的新工艺的细节，以及新设备的场效应特性，介绍和讨论。场效应晶体管（FET）的特性，具有良好的栅极控制和明确的夹断在室温下，并与新开发的IPG FET的理论进行比较。
A novel wire transistor structure with Schottky in-plane gates (IPG) to the AlGaAs/GaAs quantum well (QW) has been successfully fabricated and characterized. An in situ selective electrochemical process is utilized to form direct Schottky contacts to the edge of the QW. Details of the novel process for transistor fabrication, as well as field-effect characteristics of the novel device, are presented and discussed. Field-effect transistor (FET) characteristics with excellent gate control and clear pinch-off are obtained at room temperature and they are compared with a theory newly developed for the IPG FET.