A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer
A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer
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DOI：
10.1063/1.3068752
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发表时间：
2009-01
影响因子：
4
通讯作者：
F. Zhu;Han Zhao;I. Ok;H. Kim;J. Yum;Jack C. Lee;N. Goel;W. Tsai;C. K. Gaspe;M. Santos
中科院分区：
文献类型：
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作者：
F. Zhu;Han Zhao;I. Ok;H. Kim;J. Yum;Jack C. Lee;N. Goel;W. Tsai;C. K. Gaspe;M. Santos
在这篇文章中，我们展示了一种高性能的In0.53Ga0.47As沟道n型金属氧化物半导体场效应晶体管，具有硅界面钝化层（IPL）和HfO2栅极氧化物。由于硅IPL在改善接口质量方面的有效性，获得了良好的器件特性，包括峰值跨导7.7 mS/mm (Lg=5 μm, Vd=50 mV)，驱动电流为158 mA/mm (Lg=5 μm, Vgs=Vth+2 V, Vd=2.5 V)，峰值有效通道迁移率为1034 cm2/V s。作为器件设计的一个重要因素，硅IPL厚度对晶体管特性的影响进行了研究。
In this letter, we demonstrate a high performance In0.53Ga0.47As channel n-type metal-oxide-semiconductor field effect transistor with silicon interface passivation layer (IPL) and HfO2 gate oxide. Owing to the effectiveness of Si IPL on improving the interface quality, good device characteristics have been obtained, including the peak transconductance of 7.7 mS/mm (Lg=5 μm and Vd=50 mV), drive current of 158 mA/mm (Lg=5 μm, Vgs=Vth+2 V, and Vd=2.5 V), and the peak effective channel mobility of 1034 cm2/V s. As an important factor on device design, the impact of silicon IPL thickness on the transistor characteristics has been investigated.