Exchange Interactions and Curie Temperatures in Dilute Magnetic Semiconductors
Exchange Interactions and Curie Temperatures in Dilute Magnetic Semiconductors
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DOI:
10.1007/s10751-005-9149-5
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发表时间:
2004-03
影响因子:
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通讯作者:
Kazunori Sato;Kazunori Sato;P. Dederichs;H. Katayama‐Yoshida
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文献类型:
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作者:
Kazunori Sato;Kazunori Sato;P. Dederichs;H. Katayama‐Yoshida
We discuss the origin of ferromagnetism in dilute magnetic semiconductors based on ab initio calculations for Mn-doped GaN, GaP, GaAs and GaSb. We use the Korringa–Kohn–Rostoker method in connection with the coherent potential approximation to describe the substitutional and moment disorder. Curie temperatures (TC) are calculated from first-principles by using a mapping on a Heisenberg model in a mean field approximation. It is found that if impurity bands are formed in the gap, as it is the case for (Ga, Mn)N, double exchange dominates leading to a characteristic √cdependence ofTCas a function of the Mn concentrationc. On the other hand, if the d-states are localized, as in (Ga, Mn)Sb, Zener's p–d exchange prevails resulting in a linearc-dependence ofTC. In order to have more precise estimations ofTC, effective exchange coupling constantsJij's are calculated by using the formula of Liechtensteinet al.It is found that the range of the exchange interaction in (Ga, Mn)N is very short. On the other hand, in (Ga, Mn)As the interaction is weaker but long ranged. Monte Carlo simulations show that theTCvalues of (Ga, Mn)N are very low since percolation is difficult to achieve for small concentrations and the mean field approximation strongly overestimatesTC. Even in (Ga, Mn)As the percolation effect is still important.