Photoluminescence properties of GaN with dislocations induced by plastic deformation
Photoluminescence properties of GaN with dislocations induced by plastic deformation
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塑性变形引起位错的 GaN 的光致发光特性
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
T. Yao
中科院分区：
文献类型：
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作者：
I. Yonenaga;H. Makino;S. Itoh;T. Goto;T. Yao
通过在950-1000°C下的塑性变形，将（1100）棱柱面上的新鲜（a/3）[1120]位错引入GaN体晶体中。在光致发光研究在11 K，近带边（3.48 eV）发光强度显着下降，在变形的GaN，这是由于在塑性变形过程中引入高密度的非辐射复合中心。黄带发光（2.22 eV）由于塑性变形而减少，而几个发光带中心在1.79，1.92，和2.4 eV的发展。变形和退火的PL功能的依赖性表明，黄色发光是不相关的GaN中的边缘位错的原生结构。
Fresh (a/3)[1120] dislocations on the (1100) prismatic plane were introduced into GaN bulk crystals by plastic deformation at 950–1000°C. In photoluminescence studies at 11 K, the near-band-edge (3.48 eV) luminescence intensity decreased remarkably in the deformed GaN, which was attributed to the introduction of high-density nonradiative recombination centers during plastic deformation. The yellow-band luminescence (2.22 eV) decreased due to plastic deformation, while several luminescence bands centered at 1.79, 1.92, and 2.4 eV developed. The dependence of PL features on deformation and annealing suggests that yellow luminescence is not related to the native structure of edge dislocations in GaN.