A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cycles
A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cycles
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一种新颖的 MONOS 非易失性存储器件，确保在 10/sup 7/ 擦除/写入周期后数据保留 10 年
DOI：
10.1109/16.239742
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Y. Kamigaki
中科院分区：
文献类型：
--
作者：
S. Minami;Y. Kamigaki
描述了一种适用于高密度电可擦除和可编程只读存储器（EEPROM）的高度可靠的非易失性存储器器件。提出了一种金属-氧化物-氮化物-氧化物-半导体（MONOS）结构，其顶部氧化物通过化学气相沉积（CVD）在氮化物上制备。该CVD氧化物通过热解退火致密化，并具有化学计量的SiO/sub 2/特性。它的势垒，防止存储的电荷通过顶部氧化物衰减到栅极，因此变得比传统MONOS结构中使用的热生长顶部氧化物更尖锐。为了比较所提出的MONOS、传统MONOS和MNOS结构，在同一生产线上制造了三个器件。16.7 nm的氮化物厚度与4.0 nm的顶部氧化物厚度相结合，导致栅极电容等于具有23.5 nm氮化物厚度的常规NMOS结构的栅极电容。此外，一个不对称的擦除/写入编程电压已被适配到MONOS器件的操作，通过考虑擦除状态退化和写入状态保持。在85 ℃时，申报的MONOS器械具有10/sup 7/-周期耐久性和10年数据保留。>
A highly reliable nonvolatile memory device suitable for high-density electrically erasable and programmable read only memories (EEPROMs) is described. A metal-oxide-nitride-oxide-semiconductor (MONOS) structure whose top oxide is fabricated by chemical vapor deposition (CVD) on the nitride is proposed. This CVD oxide is densified by pyrogenic annealing and has stoichiometric SiO/sub 2/ characteristics. Its potential barrier, which prevents stored charges from decaying through the top oxide to the gate, thus becomes sharper than that of the thermally grown top oxide used in the conventional MONOS structure. For comparison between the proposed MONOS, conventional MONOS, and MNOS structures, three devices were fabricated on the same process line. The 16.7-nm nitride thickness in combination with a top oxide thickness of 4.0 nm results in a gate capacitance equivalent to that of the conventional NMOS structure with a 23.5-nm nitride thickness. Moreover, an asymmetric erase/write programming voltage has been adapted to the MONOS device operation by considering both erased-state degradation and written-state retention. At 85 degrees C, the proposed MONOS device has 10/sup 7/-cycle endurance with 10-year data retention. >