Electronic transport properties of individual chemically reduced graphene oxide sheets
Electronic transport properties of individual chemically reduced graphene oxide sheets
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DOI：
10.1021/nl072090c
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发表时间：
2007-11-01
期刊：
影响因子：
10.8
通讯作者：
Kern, Klaus
中科院分区：
文献类型：
--
作者：
Gomez-Navarro, Cristina;Weitz, R. Thomas;Kern, Klaus
进行化学还原的各个氧化石墨烯片被电表征为温度和外部电场的函数。在室温下，完全还原的单层膜的电导率在0.05和2 S/cm之间，场效应迁移率为2-200 cm（2）/Vs。温度依赖性的电测量和拉曼光谱研究表明，电荷传输发生通过可变范围跳跃之间的完整的石墨烯岛的大小在几个纳米的顺序。此外，多层片材的比较研究表明，由于与Si/SiO2基材的相互作用，最下层的导电性降低了2倍以上。
Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm(2)/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.