Flexible One-Dimensional Metal–Insulator–Graphene Diode
Flexible One-Dimensional Metal–Insulator–Graphene Diode
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DOI：
10.1021/acsaelm.9b00122
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发表时间：
2019-05
影响因子：
4.7
通讯作者：
Zhenxing Wang;B. Uzlu;M. Shaygan;M. Otto;M. Ribeiro;E. G. Marín;G. Iannaccone;G. Fiori;M. Elsayed;R. Negra;D. Neumaier
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文献类型：
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作者：
Zhenxing Wang;B. Uzlu;M. Shaygan;M. Otto;M. Ribeiro;E. G. Marín;G. Iannaccone;G. Fiori;M. Elsayed;R. Negra;D. Neumaier
提出了一种新的低电容金属-绝缘体-石墨烯(1D-MIG)二极管的一维几何结构。1D-MIG二极管的结形成在氧化铝包裹的石墨烯的1D边缘与用作阻挡材料的二氧化钛。二极管表现出超高的电流密度，因为在石墨烯中和通过势垒的传输是在平面上的。该几何结构在二极管的阴极和阳极之间提供了非常低的电容耦合，频率响应高达100 GHz，并确保了高达2.4 THz的潜在高频性能。一维MIG二极管在挠性衬底上弯曲半径为6.4 mm的弯曲条件下均能稳定工作。
In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.