High Al-content AlGaN/GaN MODFETs for ultrahigh performance
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
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DOI：
10.1109/55.658600
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发表时间：
1998-02
影响因子：
4.9
通讯作者：
Y. Wu;B. Keller;P. Fini;S. Keller;T. Jenkins;L. Kehias;S. Denbaars;U. Mishra
中科院分区：
文献类型：
--
作者：
Y. Wu;B. Keller;P. Fini;S. Keller;T. Jenkins;L. Kehias;S. Denbaars;U. Mishra
提出使用具有高Al摩尔分数的AlGaN层来增加AlGaN/GaN MODFET结构的等效优值。结果表明，室温迁移率随Al摩尔分数的增加而减小，直至50%。通过光学光刻的0.7-/spl μ/m栅长Al/sub 0.5/Ga/sub 0.5/N/GaN MODFFET表现出1 A/mm的电流密度和高达200 V的三端击穿电压。在没有热管理的蓝宝石衬底上的这些器件还分别在8和10 GHz下表现出2.84和2.57 W/mm的CW功率密度，这表示GaN基FET的显著性能改进。
The use of an AlGaN layer with high Al mole-fraction is proposed to increase the equivalent figures of merit of the AlGaN/GaN MODFET structure. It is shown that the room temperature mobility has little degradation with increasing Al mole-fraction up to 50%. 0.7-/spl mu/m gate-length Al/sub 0.5/Ga/sub 0.5/N/GaN MODFETs by optical lithography exhibit a current density of 1 A/mm and three-terminal breakdown voltages up to 200 V. These devices on sapphire substrates without thermal management also show CW power densities of 2.84 and 2.57 W/mm at 8 and 10 GHz, respectively, representing a marked performance improvement for GaN-based FETs.