Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms

Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms
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Ga掺杂对ZnO纳米薄膜中SHG晶体结构和偏振模式的影响

DOI:
10.3390/nano9060905
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发表时间:
2019-06
期刊:
影响因子:
5.3
通讯作者:
Lu Peixiang
Lu Peixiang
中科院分区:
材料科学3区
文献类型:
--
作者:
Long Hua;Habeeb Ammar Ayesh;Kinyua Dickson Mwenda;Wang Kai;Wang Bing;Lu Peixiang

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The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of d33/d31 (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method.
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