Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell

Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell
复制标题

DOI：
10.1109/vlsit.2014.6894416
复制
发表时间：
2014-06
期刊：
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
影响因子：
--
通讯作者：
A. Ueda;Seungmin Jung;T. Mizutani;Ashok Kumar;T. Saraya;T. Hiramoto
A. Ueda;Seungmin Jung;T. Mizutani;Ashok Kumar;T. Saraya;T. Hiramoto
中科院分区：
其他
文献类型：
--
作者：
A. Ueda;Seungmin Jung;T. Mizutani;Ashok Kumar;T. Saraya;T. Hiramoto

文献摘要

相似文献

提出了一种由浮栅构成的Vth自调整MOSFET，并成功地实现了Vth自调整和SRAM单元在0.1V以下的超低电压工作。在该器件中，Vth在接通状态时自动降低，在关断状态下自动增加，从而获得高的离子/离子关断比以及在低Vdd时稳定的SRAM操作。在具有Vth自调整nFET和pFET的6T SRAM单元中，实验证明最小工作电压为0.1V。
A Vth self-adjusting MOSFET consisting of floating gate is proposed and the ultra-low voltage operation of the Vth self-adjustment and SRAM cell at as low as 0.1V is successfully demonstrated. In this device, Vth automatically decreases at on-state and increases at off-state, resulting in high Ion/Ioff ratio as well as stable SRAM operation at low Vdd. The minimum operation voltage at 0.1V is experimentally demonstrated in 6T SRAM cell with Vth self-adjusting nFETs and pFETs.