Efficiency enhancement of Cu(In,Ga)Se2 thin-film solar cells by a post-deposition treatment with potassium fluoride
Efficiency enhancement of Cu(In,Ga)Se2 thin-film solar cells by a post-deposition treatment with potassium fluoride
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DOI：
10.1002/pssr.201307238
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发表时间：
2013-09-01
影响因子：
2.8
通讯作者：
Powalla, Michael
中科院分区：
文献类型：
--
作者：
Laemmle, Anke;Wuerz, Roland;Powalla, Michael
采用氟化钾（KF）后沉积处理（PDT）方法，在镀钼的氧化铝（Al 2 O3）衬底上生长了无碱金属Cu（In，Ga）Se-2（CIGS）吸收体。向吸收体中添加K导致电池效率从无K电池的10.0%强烈增加到K掺杂电池的14.2%，这主要是由开路电压V-oc和填充因子FF的增加驱动的，并且导致净电荷载流子密度的增加。因此，通过KF-PDT的K掺杂与用Na掺杂相当。(c)2013 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
Alkali-free Cu(In,Ga)Se-2(CIGS) absorbers grown on Mo-coated alumina (Al2O3) substrates were doped with potassium (K) after CIGS growth by a potassium fluoride (KF) post-deposition treatment (PDT). The addition of K to the absorber leads to a strong increase in cell efficiency from 10.0% for the K-free cell to 14.2% for the K-doped cell, mainly driven by an increase in the open-circuit voltage V-oc and the fill factor FF, and to an increase in the net charge carrier density. Hence K doping by KF-PDT is comparable to doping with Na. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim