Characterization of low-k dielectric SiCOH films deposited with decamethylcyclopentasiloxane and cyclohexane.
Characterization of low-k dielectric SiCOH films deposited with decamethylcyclopentasiloxane and cyclohexane.
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用十甲基环五硅氧烷和环己烷沉积的低 k 介电 SiCOH 薄膜的表征。
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发表时间：
2012
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通讯作者：
H. Chae
中科院分区：
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作者：
Daekyoung Kim;Hoonbae Kim;Haegyu Jang;D. Jung;H. Chae
以十甲基环戊基硅氧烷(DMCPSO，C10H30O5Si5)和环己烷(C6H12)为前驱体，采用等离子体增强化学气相沉积技术，在25~200℃的沉积温度范围内制备了超低k介电SiCOH薄膜，研究了薄膜的化学组成和沉积动力学。由于DMCPSO相对较大的环状结构和环己烷中碳含量较大的固有纳米孔，获得了1.9-2.4的低介电常数。在温度范围内发现了三个不同的沉积区。温度低于40℃时，沉积速率随温度升高而增加，当温度升高到75℃时，沉积速率降低，表观活化能在40℃时为56kJ/molxK，在40~100℃时为-26kJ/molxK。在40~100℃温度范围内，烃类沉积和分解过程相互竞争，分解占优势，表现为负活化能。沉积速率随温度在100℃以上的进一步升高相对不受影响，FTIR分析和沉积动力学分析表明，碳氢化合物沉积是决定化学成分和沉积速率的主要因素。当温度低于40℃时，尤其是Si-O组分在40℃以上时，碳氢化合物沉积占主导地位。我们认为，通过温度控制来控制沉积碳氢化合物的分数，可以控制低k薄膜的介电常数。
Ultra low-k dielectric SiCOH films were deposited with decamethylcyclopentasiloxane (DMCPSO, C10H30O5Si5) and cyclohexane (C6H12) precursors by plasma-enhanced chemical vapor deposition at the deposition temperature between 25 and 200 degrees C and their chemical composition and deposition kinetics were investigated in this work. Low dielectric constants of 1.9-2.4 were obtained due to intrinsic nanoscale pores originating from the relatively large ring structure of DMCPSO and to the relatively large fraction of carbon contents in cyclohexane. Three different deposition regions were identified in the temperature range. Deposition rates increased with temperature below 40 degrees C and decreased as temperature increased to 75 degrees C with apparent activation energies of 56 kJ/mol x K at < 40 degrees C, -26 kJ/mol x K at 40-100 degrees C, respectively. In the temperature region of 40-100 degrees C hydrocarbon deposition and decomposition process compete each other and decomposition becomes dominant, which results in apparent negative activation energy. Deposition rates remain relatively unaffected with further increases of temperature above 100 degrees C. FTIR analysis and deposition kinetic analysis showed that hydrocarbon deposition is the major factor determining chemical composition and deposition rate. The hydrocarbon deposition dominates especially at lower temperatures below 40 degrees C and Si-O fraction increases above 40 degrees C. We believe that dielectric constants of low-k films can be controlled by manipulating the fraction of deposited hydrocarbon through temperature control.