BEHAVIOR OF A-SINH AND A-SIONH FILMS IN CONDENSED WATER
BEHAVIOR OF A-SINH AND A-SIONH FILMS IN CONDENSED WATER
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DOI：
10.1149/1.2069076
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发表时间：
1992-11-01
影响因子：
3.9
通讯作者：
KNOLLE, WR
中科院分区：
文献类型：
--
作者：
OSENBACH, JW;KNOLLE, WR
研究了冷凝水中等离子沉积氮化硅和氮氧化硅薄膜的蚀刻速率与水温、溶液 pH 值和薄膜成分的函数关系。所有薄膜在 50 至 125 摄氏度水温下的蚀刻速率均在 0.2 至 10.0 nm/h 之间。活化能在0.6和1.0 eV之间。当设备上可能出现水凝结时，钝化层的水蚀刻应被视为潜在的故障模式。
The etch rates of plasma-deposited silicon nitride and silicon oxynitride films in condensed water were studied as a function of water temperature, pH of the solution, and film composition. The etch rates for all films at water temperatures between 50 and 125-degrees-C were between 0.2 and 10.0 nm/h. The activation energies were between 0.6 and 1.0 eV. Where water condensation on devices is possible, water etching of the passivation should be considered as a potential failure mode.