Coupling between interfacial strain and oxygen vacancies at complex-oxides interfaces
Coupling between interfacial strain and oxygen vacancies at complex-oxides interfaces
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DOI：
10.1063/5.0049001
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发表时间：
2021-05
影响因子：
3.2
通讯作者：
D. Aidhy;Kanishka Rawat
中科院分区：
文献类型：
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作者：
D. Aidhy;Kanishka Rawat
复合氧化物的界面具有丰富的物理特性，导致了各种新的功能性质的出现。虽然菌株工程在过去十年中被广泛用于诱导许多性质，但最近氧空位的作用越来越引起人们的广泛关注。特别是，研究表明，应变和氧空位形成能之间存在着强烈的耦合。这种耦合可以用来改变界面上的氧空位浓度，从而打开另一个自由度来控制界面性质。在这篇综述中，我们重点介绍了最近研究耦合和新出现的界面性质之间的联系的工作。这种耦合不仅被用来在特定的晶体氧位置选择性地产生氧空位，而且还被用来操纵界面附近的氧空位的有序性。此外，最近的研究已经将应变和八面体扭曲之间的现有联系扩展到氧空位，其中空位在八面体扭曲所产生的性质中的作用现在正在被揭示。最后，我们讨论了最近在复杂氧化物的设计和发现以及性质预测方面的数据科学努力。
The complex-oxides interfaces hold rich physics that have resulted in the emergence of various novel functional properties. While strain engineering has been widely used to induce many properties over the past decade, more recently the role of oxygen vacancies has increasingly drawn wider attention. In particular, research has revealed that there exists a strong coupling between strain and oxygen vacancy formation energy. This coupling can be used to alter oxygen vacancy concentration at interfaces, thereby opening another degree of freedom to control interfacial properties. In this review, we highlight recent works that have interrogated the connection between coupling and the emerging interfacial properties. The coupling has not only been used to selectively create oxygen vacancies at specific crystallographic oxygen sites but has also been used to manipulate ordering of oxygen vacancies near interfaces. In addition, recent studies have extended the existing connection between strain and octahedra distortion to oxygen vacancies, where the role of vacancies in the properties emerging due to octahedra distortion is now being unveiled. Finally, we discuss recent data-science efforts in the design and discovery of complex oxides and property prediction.