Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond
Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond
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DOI：
10.1088/1361-6641/ab9d35
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发表时间：
2020-08
影响因子：
1.9
通讯作者：
W. M. Waller;J. Pomeroy;D. Field;Edmund Smith;P. May;M. Kuball
中科院分区：
文献类型：
--
作者：
W. M. Waller;J. Pomeroy;D. Field;Edmund Smith;P. May;M. Kuball
形成中间层的碳化物，例如非晶氮化硅，通常用于金刚石基氮化镓异质集成。该中间层具有低导热率，引入了额外的外在界面热阻。因此，省略该层，直接将 GaN 与金刚石键合（范德华键）可能是有利的。然而，已知弱结合界面会增加固有热边界电阻。已采用经过调整的声学失配模型来评估哪种键合方法最适合低热阻金刚石基氮化镓。预计弱键合的 GaN-金刚石界面的热边界电阻将达到 200 m2 K GW−1，接近 220 ± 70 m2 K GW−1 的测量值，比包含 10 nm 厚的 SiN 中间层时测量的值高约 7 倍。因此，共价键合界面对于实现低热阻金刚石基氮化镓至关重要。
Carbide forming interlayers, such as amorphous silicon nitride, are typically used for GaN-on-diamond heterogenous integration. This interlayer has a low thermal conductivity, introducing an additional extrinsic interfacial thermal resistance. It may therefore be advantageous to omit this layer, directly bonding GaN-to-diamond (van der Waals bond). However, weakly bonded interfaces are known to increase the intrinsic thermal boundary resistance. An adapted acoustic mismatch model has been implemented to assess which bonding approach is the most optimal for low thermal resistance GaN-on-diamond. A high thermal boundary resistance of 200 m2 K GW−1 is predicted for weakly bonded GaN-to-diamond interfaces, which is close to the measured value of 220 ± 70 m2 K GW−1, and ∼7× higher than values measured when a 10’s nm-thick SiN interlayer is included. Covalently bonded interfaces are therefore critical for achieving low thermal resistance GaN-on-diamond.