Changes of X-ray Photoelectron Spectra for Oxides by Ion Sputtering
Changes of X-ray Photoelectron Spectra for Oxides by Ion Sputtering
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离子溅射对氧化物X射线光电子能谱的变化
DOI：
10.2355/tetsutohagane1955.78.1_149
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
T. Ohtsubo
中科院分区：
文献类型：
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作者：
S. Hashimoto;K. Hirokawa;Y. Fukuda;Suzuki Kenichi;Toshiko Suzuki;N. Usuki;N. Gennai;S. Yoshida;Mitsuru Koda;H. Sezaki;H. Horie;A. Tanaka;T. Ohtsubo
简介：本文通过循环实验，建立了X射线辐射或离子溅射引起的电荷增加对氧化物XPS谱结合能移动的修正，并确定了Ar离子溅射引起化学状态变化的判据。Al2O3、SiO2、MgO、TiO2和NiO样品以板和粉末形式用于实验。我们确定Al 2p（Si 2p或Mg 1s）线与O 1s线之间的能量差比Al 2p（Si 2p或Mg 1s）线与C 1s线之间的能量差对Al 2O 3（SiO2或MgO）的结合能位移的测量给出更好的校正。Ar离子溅射后，TiO2和NiO被还原，在Al2O3和SiO2的情况下引起损伤，而MgO保持稳定，如使用XPS谱的结合能和FWHM所检验的。我们揭示了氧化物的离子溅射引起的变化取决于自由生成焓的变化和离子性。我们还表明，无论是板和粉末样品是有用的标准，用于确定结合能从XPS光谱。
Synopsis : Round-robin experiments have been performed in order to establish the correction of binding energy shift of XPS spectra in oxides by the chargeup which results from the radiation of X-rays or ion sputtering and to determine the criteria for the change of chemical state by Ar ion sputtering. Samples of Al2O3 , SiO2 , MgO, TiO2 and NiO, in plate and powder form, were used for the experiments. We determined that the difference in energy between the Al 2p (Si 2p or Mg 1s) line and the O is line gives a better correction of the measurements of the binding energy shift of Al2O3 (SiO2 or MgO) than that between the Al 2p (Si 2p or Mg 1s) line and the C 1s line. After Ar ion sputtering, TiO2 and NiO are reduced and damage is induced in the case of Al2O3 and SiO2 , while MgO remains stable, as examined using the binding energy and FWHM of XPS spectra. We revealed that the changes caused by ion sputtering of oxides depend on the change of free formation enthalpy and the ionicity. We also showed that both plate and powder samples are useful as standards for determining the binding energy from XPS spectra.