Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics
Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics
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背接触碲化镉光伏用氮掺杂碲化锌薄膜的性能
DOI：
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发表时间：
2017
影响因子：
2.1
通讯作者：
W. Sampath
中科院分区：
文献类型：
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作者：
T. Shimpi;J. Drayton;D. Swanson;W. Sampath
通过反应射频 (RF) 溅射，在工艺气体中引入不同量的氮气，将碲化锌 (ZnTe) 薄膜沉积在未镀膜的玻璃上，并对所得氮掺杂 ZnTe (ZnTe:N) 薄膜的结构和电子传输特性进行了表征。根据透射和 X 射线衍射测量，观察到 ZnTe:N 薄膜的结晶质量随着沉积过程中氮的增加而降低。通过霍尔效应测量确定的 ZnTe:N 薄膜的体载流子浓度显示，在 4% 氮气流速下略有下降。还研究了 ZnTe:N 薄膜作为碲化镉 (CdTe) 太阳能电池背接触的效果。在 CdCl2 钝化之前或之后在 CdTe/CdS 样品上沉积 ZnTe:N 薄膜。小面积器件的特征在于其电子特性。掠射角 X 射线衍射测量和能量色散光谱分析证实，在 ZnTe:N 薄膜沉积后进行 CdCl2 钝化的样品中锌大量损失。
Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.