Heteroepitaxial growth of ferromagnetic rutile CoxTi1−xO2−δ on GaN (0001)
Heteroepitaxial growth of ferromagnetic rutile CoxTi1−xO2−δ on GaN (0001)
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DOI：
10.1063/1.2838297
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发表时间：
2008-01
影响因子：
4
通讯作者：
Y. Hirose;T. Hitosugi;J. Kasai;Y. Furubayashi;K. Nakajima;T. Chikyow;S. Konuma;T. Shimada;T. Hasegawa
中科院分区：
文献类型：
--
作者：
Y. Hirose;T. Hitosugi;J. Kasai;Y. Furubayashi;K. Nakajima;T. Chikyow;S. Konuma;T. Shimada;T. Hasegawa
采用脉冲激光沉积法在GaN（0001）衬底上异质外延生长了金红石型CoxTi 1 − xO 2 −δ（100）薄膜。磁光克尔效应和横截面透射电子显微镜（TEM）测量表明，在氧分压为10−6-10− 5 Torr、载流子密度为ne = 3× 1018 cm −3的条件下制备的Co0.03Ti0.97O2−δ薄膜表现出室温铁磁性，没有任何沉淀物或第二相。高分辨率的TEM观察证实了CoxTi 1 − xO 2 −δ和GaN之间的界面是原子级光滑的，没有相互混合。这些结果使我们得出结论，CoxTi 1 − xO 2 −δ是有前途的自旋注入GaN基自旋电子器件。
A rutile CoxTi1−xO2−δ (100) film was heteroepitaxially grown on GaN (0001) by pulsed laser deposition. Magneto-optical Kerr effect and cross-sectional transmission electron microscope (TEM) measurements revealed that Co0.03Ti0.97O2−δ films prepared at an oxygen partial pressure of 10−6–10−5Torr with a carrier density ne⩾3×1018cm−3 exhibit room-temperature ferromagnetism without any precipitates or secondary phase. High-resolution TEM observations confirmed that the interface between CoxTi1−xO2−δ and GaN is atomically smooth without intermixing. These results lead us to conclude that CoxTi1−xO2−δ is promising as a spin injector in GaN-based spin-electronic devices.