A Low Power Real-time On-Chip Power Sensor in 45-nm SOI
A Low Power Real-time On-Chip Power Sensor in 45-nm SOI
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DOI：
10.1109/tcsi.2011.2177129
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发表时间：
2012-01
期刊：
影响因子：
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通讯作者：
Srikar Bhagavatula;B. Jung
中科院分区：
文献类型：
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作者：
Srikar Bhagavatula;B. Jung
本文介绍了一种实时片上功率和温度传感器，用于缩放CMOS工艺中的有源功率管理。与早期的功率估计技术不同，该传感器测量由于电流负载引起的电压降，并将其转换为脉冲计数，以获得真实的功率估计。线性回归用于根据给定温度下测得的输出频率估计负载电流。同样的传感器也用于在输出时间周期随温度线性减小的模式下估计温度。测量结果显示，在22 °C-100°C范围内的温度估计精度在±1.05°C以内，实际功耗在±10%以内（负载≤ 3.3 mA）。该功率温度传感器采用45 nm SOI工艺制作，面积为140 μm×140μm，在1.2 V电源电压下功耗为120 μW。
This paper introduces a real-time on-chip power and temperature sensor for active power management in scaled CMOS technologies. In a distinct departure from earlier power estimation techniques, this sensor measures the voltage drop due to a current load and converts it into pulse counts to get a power estimate in real time. Linear regression is used to estimate load current based on the measured output frequency at a given temperature. The same sensor is also used to estimate temperature in a mode where output time period decreases linearly with temperature. Measurement results show accuracy to within ±1.05°C for temperature estimation in the range of 22 °C-100°C and within ±10% of the actual power consumed (for loads ≤ 3.3 mA). Fabricated in 45-nm SOI technology, this power and temperature sensor occupies an area of 140 μm×140μm and has a power overhead of 120 μW at 1.2 V supply.