Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm
Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm
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DOI：
10.1063/1.4944849
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发表时间：
2016-03-21
影响因子：
4
通讯作者：
Niu, Zhichuan
中科院分区：
文献类型：
--
作者：
Jiang, Dongwei;Xiang, Wei;Niu, Zhichuan
本文报道了截止波长约为21 μ m的Ⅱ型InAs/GaSb超晶格红外探测器的量子效率与有源区铍浓度的关系。结果表明，量子效率和响应度与掺杂浓度有明显的关系。通过在吸收区逐渐掺杂，进一步提高了量子效率。在77 K时，VLWIR探测器的50%截止波长为18 μ m，R（0）A保持在6 Ω cm（2）的稳定值。不同的铍浓度导致在8-15 μ m窗口中的平均量子效率从35%增加到55%，其中π区厚度为3.0 μ m，对于U偏压=-0.3V，并且没有抗反射涂层。进一步的结果是，在吸收区逐渐掺杂，量子效率最大达到66%，在15 μ m处的峰值探测率为3.33 × 10 ~（10）cm Hz（1/2）/W。(C)2016 AIP Publishing LLC.
The authors report the dependence of the quantum efficiency on beryllium concentration in the active region of type-II InAs/GaSb superlattice infrared detector with a cutoff wavelength around 21 mu m. It is found that the quantum efficiency and responsivity show a clear delineation in comparison to the doping concentration. The quantum efficiency is further improved by gradually doping in the absorbing region. At 77 K, the 50% cutoff wavelength of the VLWIR detector is 18 mu m, and the R(0)A is kept at a stable value of 6 Omega cm(2). Different beryllium concentration leads to an increase of an average quantum efficiency in the 8-15 mu m window from 35% to 55% with a pi-region thickness of 3.0 mu m, for U-bias = -0.3 V, and no anti-reflection coating. As for a further result, the quantum efficiency reaches at a maximum value of 66% by gradually doping in the absorbing region with the peak detectivity of 3.33 x 10(10) cm Hz(1/2)/W at 15 mu m. (C) 2016 AIP Publishing LLC.