Universal scaling of the self-field critical current in superconductors: from sub-nanometre to millimetre size.
Universal scaling of the self-field critical current in superconductors: from sub-nanometre to millimetre size.
复制标题
超导体中自场临界电流的通用缩放：从亚纳米到毫米大小。
DOI：
10.1038/s41598-017-10226-z
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发表时间：
2017-08-30
影响因子：
4.6
通讯作者：
Tallon JL
中科院分区：
文献类型：
--
作者：
Talantsev EF;Crump WP;Tallon JL
超导体中的普遍缩放行为显着阐明了这些材料中的波动和相变现象。然而，没有考虑到最实用的特性（临界电流）的普遍行为，因为流行的模型会引起磁通涡旋的成核和迁移。这种迁移主要取决于钉扎，并且一种材料与另一种材料的详细微观结构自然不同，即使在单一材料内也是如此。通过微观结构工程，场相关临界电流不断得到改进，从而说明了其非普遍行为。但在这里，我们展示了任何超导体、任何对称性、几何形状或能带多重性的自场临界电流的通用尺寸缩放。我们分析的关键是样品尺寸范围广泛，从单原子层到毫米级。它们具有广泛变化的微观结构，转变温度范围从 1.2 K 到当前记录 203 K。在所有情况下，临界电流均由基本表面电流密度极限控制，该极限表面电流密度极限由相关临界场除以穿透深度给出。
Universal scaling behaviour in superconductors has significantly elucidated fluctuation and phase transition phenomena in these materials. However, universal behaviour for the most practical property, the critical current, was not contemplated because prevailing models invoke nucleation and migration of flux vortices. Such migration depends critically on pinning, and the detailed microstructure naturally differs from one material to another, even within a single material. Through microstructural engineering there have been ongoing improvements in the field-dependent critical current, thus illustrating its non-universal behaviour. But here we demonstrate the universal size scaling of the self-field critical current for any superconductor, of any symmetry, geometry or band multiplicity. Key to our analysis is the huge range of sample dimensions, from single-atomic-layer to mm-scale. These have widely variable microstructure with transition temperatures ranging from 1.2 K to the current record, 203 K. In all cases the critical current is governed by a fundamental surface current density limit given by the relevant critical field divided by the penetration depth.
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影响因子：
3.6
作者：
Brojeny, AAB;Clem, JR
通讯作者：
Clem, JR
影响因子：
3.7
作者：
Genenko, YA;Snezhko, AV;Freyhardt, HC
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影响因子：
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作者：
FARRELL, DE;RICE, JP;LIU, JZ
通讯作者：
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影响因子：
2.1
作者：
GARBER, M;SHEN, S;MORGAN, G
通讯作者：
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2
作者：
GAROCHE, P;MANUEL, P;MOLINIE, P
通讯作者：
MOLINIE, P