Ultra-Long Lifetimes of Single Quantum Emitters in Monolayer WSe2/hBN Heterostructures
Ultra-Long Lifetimes of Single Quantum Emitters in Monolayer WSe2/hBN Heterostructures
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DOI：
10.1002/qute.201900022
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发表时间：
2019-06-01
影响因子：
4.4
通讯作者：
Hendrickson, Joshua R.
中科院分区：
文献类型：
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作者：
Dass, Chandriker Kavir;Khan, Mahtab A.;Hendrickson, Joshua R.
本文报道了单层WSe2/hBN异质结构中缺陷捕获单量子发射体（SQEs）的超长寿命。这些SQEs的寿命约为225 ns，比先前报道的WSe2中缺陷捕获激子的寿命大两个数量级。这些SQEs由共线极化双峰组成，具有0.45 meV的精细结构分裂。二阶相关测量显示反束单光子发射，其g（(2)）值接近0.13。通过数值分析和模拟，揭示了这种长寿命的单发射体是如何在W位的反位缺陷中产生明暗激子耦合的。此外，还报道了高质量的单光子发射，其寿命范围从2ns到超过200ns，这表明存在各种其他可能的缺陷结构。在单一材料系统中，在广泛的寿命范围内产生高保真单光子发射的灵活性，在从高比特率单光子源到量子存储设备的许多光学量子计算应用中具有潜力。
Here, ultra-long lifetimes of defect-trapped single quantum emitters (SQEs) in monolayer WSe2/hBN heterostructures are reported. The lifetimes of these SQEs are approximately 225 ns, more than two orders of magnitude larger than what has been previously reported for defect-trapped excitons in WSe2. These SQEs consist of co-linearly polarized doublet peaks with a fine structure splitting of 0.45 meV. Second-order correlation measurements show antibunched single-photon emission with a g((2)) value of approximate to 0.13. Through numerical analysis and modeling, it is shown how such long-lifetime single emitters can arise from bright and dark exciton coupling in antisite defects on the W sites. Additionally, high-quality single-photon emission over a wide range of lifetimes-from 2 ns to over 200 ns-is also reported, suggesting a variety of other possible defect structures present. The flexibility to generate high fidelity single-photon emission, over a wide range of lifetimes in a single material system, has potential in many optical quantum computing applications from high-bit-rate single-photon sources to quantum memory devices.