Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
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通过预离子注入硅衬底增强 SiGe 薄层的应变弛豫
DOI：
10.1143/jjap.42.l735
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发表时间：
2003
影响因子：
1.5
通讯作者：
Y. Shiraki
中科院分区：
文献类型：
--
作者：
K. Sawano;Yoshihisa Hirose;Y. Ozawa;S. Koh;J. Yamanaka;K. Nakagawa;T. Hattori;Y. Shiraki
在SiGe分子束外延（MBE）生长之前，通过在Si衬底中注入Ar离子，获得了几乎完全弛豫的SiGe缓冲层，这对应变SiGe异质结构的生长至关重要。在适当条件下注入的Si衬底上的100 nm厚的Si 0.73 Ge 0.27层的应变弛豫率超过90%，该层比常规方法的应变弛豫率薄得多。应变弛豫被发现强烈依赖于离子剂量和能量，这表明在应变弛豫中的重结晶引起的缺陷的作用。
Almost fully relaxed thin SiGe buffer layers that are essential for the growth of strained SiGe heterostructures are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain-relaxation ratio of the 100-nm-thick Si0.73Ge0.27 layers, which is much thinner than that of the conventional method, on the Si substrates implanted under appropriate conditions exceeds 90%. Strain relaxation is found to strongly depend on ion dose and energy, suggesting the role of implantation-induced defects in strain relaxation.