Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3 µm InGaAsN Vertical Cavity Surface Emitting Lasers
Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3 µm InGaAsN Vertical Cavity Surface Emitting Lasers
复制标题
金属有机化学气相沉积和 1.3 µm InGaAsN 垂直腔表面发射激光器生长的 InGaAsN 量子阱中的铝污染
DOI：
10.1143/jjap.43.1260
复制
发表时间：
2004
影响因子：
1.5
通讯作者：
M. Tan
中科院分区：
文献类型：
--
作者：
T. Takeuchi;Ying;M. Leary;D. Mars;Yoon Kyu Song;S. D. Roh;H. Luan;L. Mantese;A. Tandon;R. Twist;S. Belov;D. Bour;M. Tan
采用金属有机物化学气相沉积（MOCVD）方法制备了高质量的InGaAsN量子威尔斯阱（QW）。我们的InGaAsN量子阱显示出低阈值电流密度和高温特性（550 A/cm 2，150 K在1275 nm的3QWs）在宽区域激光器。室温连续工作的InGaAsN 3QW垂直腔面发射激光器也获得了高输出功率（1280 nm处2.8 mW）。我们揭示了第一个坚实的证据，意想不到的铝掺入（铝污染）发生在InGaAsN量子阱连续生长的GaAs/AlGaAs结构的MOCVD。我们的研究结果表明，铝污染导致粗糙的表面和低的光致发光强度的InGaAsN量子阱。通过最小化Al污染，获得了高质量的InGaAsN量子阱。在MOCVD生长InGaAsN基器件时，应仔细考虑InGaAsN量子阱中的Al污染。
We obtained high-quality InGaAsN quantum wells (QWs) by metalorganic chemical vapor deposition (MOCVD). Our InGaAsN QWs showed low threshold current densities and high-temperature characteristics (550 A/cm2, 150 K at 1275 nm for 3QWs) in broad-area lasers. High output power (2.8 mW at 1280 nm) was also obtained from the room-temperature continuous operation of InGaAsN 3QW vertical cavity surface emitting lasers. We revealed the first solid evidence that unexpected Al incorporation (Al contamination) occurred in InGaAsN QWs continuously grown on GaAs/AlGaAs structures by MOCVD. Our results suggest that Al contamination leads to a rough surface and low photoluminescence intensity of the InGaAsN QWs. By minimizing Al contamination, high-quality InGaAsN QWs were obtained. Al contamination in InGaAsN QWs should be carefully considered in the MOCVD growth of InGaAsN-based devices.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y