Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates.
Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates.
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DOI:
10.1103/physrevlett.65.733
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发表时间:
1990-08
影响因子:
8.6
通讯作者:
R. Kunkel;B. Poelsema;L. K. Verheij;G. Comşa
中科院分区:
文献类型:
--
作者:
R. Kunkel;B. Poelsema;L. K. Verheij;G. Comşa
The discovery of a reentrant layer-by-layer growth during molecular-beam epitaxy of Pt on Pt(111) is reported. Explanations of the reentrant behavior based on previous field-ion-microscopy observations are proposed.