Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes
Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes
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DOI：
10.1063/1.1861494
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发表时间：
2005-02
影响因子：
4
通讯作者：
June O. Song;J. Kwak;T. Seong
中科院分区：
文献类型：
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作者：
June O. Song;J. Kwak;T. Seong
我们研究了Cu掺杂的In2O3（CIO）（3nm）和ScinAg（250nm）方案，用于形成高质量的p型GaN欧姆接触，用于大功率倒装芯片发光二极管（FCLED）。结果表明，当在空气中530°C退火1min时，CIO ScinAg接触在460nm波长处的比接触电阻为1.28×10−5Ω cm 2，反射率约为90%。还示出了与单个Ag接触不同，尽管在空气环境中在530°C下退火1分钟，但是ClO ScinAg接触相当稳定，没有表面和界面退化。此外，蓝色多量子阱InGaN scinGaN LED制造与退火CIO scinAg接触层在20 mA的注入电流给出了约3.0 V的正向偏置电压。结果强烈表明，CIO scinAg方案可以是用于固态照明应用的高功率GaN基FCLED的非常有前途的p型接触。
We have investigated Cu-doped In2O3(CIO)(3nm)∕Ag(250nm) schemes for forming high-quality ohmic contacts to p-type GaN for high-power flip-chip light-emitting diodes (FCLEDs). It is shown that the CIO∕Ag contacts produce specific contact resistance of 1.28×10−5Ωcm2 and reflectance of about 90% at a wavelength of 460nm when annealed at 530°C for 1min in air ambient. It is also shown that unlike single Ag contacts, the CIO∕Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1min in air ambient. In addition, blue multiquantum-well InGaN∕GaN LEDs fabricated with the annealed CIO∕Ag contact layers give forward-bias voltages of around 3.0V at an injection current of 20mA. The results strongly indicate that the CIO∕Ag scheme can be a highly promising p-type contact for high-power GaN-based FCLEDs for solid-state lighting application.