Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study
Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study
复制标题
含有蒎二醇单磺酸酸放大器的极紫外光刻胶的产酸机制：脉冲辐射分解研究
DOI：
10.1143/jjap.51.046502
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发表时间：
2012
影响因子：
1.5
通讯作者：
S. Tagawa
中科院分区：
文献类型：
--
作者：
K. Enomoto;K. Arimitsu;A. Yoshizawa;R. Joshi;H. Yamamoto;A. Oshima;T. Kozawa;S. Tagawa
极紫外（EUV，13.5nm）光刻需要非常高灵敏度的抗蚀剂，极紫外光刻被认为是最有前途的下一代光刻。已提出化学放大抗蚀剂通过使用酸放大剂来增加酸产率和灵敏度。化学放大抗蚀剂中的酸产生有两个步骤：初始酸产生和酸放大。第一个系统的研究酸生成机制的化学放大抗蚀剂显示参与酸放大器已进行时间分辨脉冲辐解和分光光度滴定方法。酸放大剂在酸生成过程中的作用，开始曝光，已澄清使用甲苯和三氟甲基苯衍生物的蒎烷二醇单磺酸盐。
Very highly sensitive resists are required for extreme ultraviolet (EUV, 13.5 nm) lithography, which is regarded as the most promising next-generation lithography. Chemically amplified resists have been proposed to increase acid yield and sensitivity through the use of an acid amplifier. There are two steps for acid generation in chemically amplified resists: initial acid generation and acid amplification. The first systematic research on the acid generation mechanisms of chemically amplified resists showing the involvement of acid amplifiers has been performed by both time-resolved pulse radiolysis and spectrophotometric titration methods. The role of acid amplifiers in acid generation processes, initiated by exposure, has been clarified using toluene and trifluoromethylbenzene derivatives of pinanediol monosulfonate.