A 90-125 GHz Stacked PA in 130 nm InP HBT with 18.3 % peak PAE at 15.3 dBm Output Power
A 90-125 GHz Stacked PA in 130 nm InP HBT with 18.3 % peak PAE at 15.3 dBm Output Power
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A%2090-125%20GHz%20堆叠%20PA%20in%20130%20nm%20InP%20HBT%20with%2018.3%20%%20peak%20PAE%20at%2015.3%20dBm%20输出%20功率
DOI：
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
S. Bowers
中科院分区：
文献类型：
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作者：
Vinay Iyer;Jay R. Sheth;Linsheng Zhang;R. Weikle;S. Bowers
介绍了一种采用130 nm InP HBT工艺实现的宽带叠层功率放大器。在两个阶段的负载线的相位对齐使用级间匹配网络，以最大限度地提高输出功率。峰值直流功耗为160 mW。该放大器在90 ~ 140 GHz范围内获得了11.5 dB的峰值增益和大于50 GHz的3 dB带宽，在112.5 GHz处的峰值PAE和输出功率分别为18.3%和15.3 dBm。该设计证明了堆叠PA拓扑结构在提高在具有低击穿电压的工艺节点中设计的放大器的功率输出方面的可行性。
This paper presents a wideband stacked power amplifier implemented in a 130 nm InP HBT process. The phase of the load lines at the two stages are aligned using an interstage matching network to maximize output power. The peak DC power consumption is 160 mW. The amplifier achieves a peak gain of 11.5 dB and a 3 dB bandwidth greater than 50 GHz, measured from 90 GHz to 140 GHz with a peak PAE and output power at 112.5 GHz of 18.3 % and 15.3 dBm respectively. This design demonstrates the viability of the stacked PA topology in improving power output in amplifiers designed in process nodes with low breakdown voltages.