Orientation control and electrical properties of PZT/LNO capacitor through chemical solution deposition
Orientation control and electrical properties of PZT/LNO capacitor through chemical solution deposition
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DOI：
10.1016/j.jeurceramsoc.2005.09.037
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发表时间：
2006
影响因子：
5.7
通讯作者：
Hisao Suzuki;Y. Miwa;T. Naoe;H. Miyazaki;T. Ota;M. Fuji;Minoru Takahashi
中科院分区：
文献类型：
--
作者：
Hisao Suzuki;Y. Miwa;T. Naoe;H. Miyazaki;T. Ota;M. Fuji;Minoru Takahashi
本文介绍了用化学溶液沉积法在Si(100)衬底上沉积PZT/La-Ni_2O_3(LNO)电极薄膜电容器。以La(NO3)3和Ni(CH3COO)2为前驱体溶液，在70 0℃下热处理制备了高度(10 0)取向的钙钛矿结构的LNO薄膜，并在LNO/Si衬底上制备了高度(10 0)和(0 0 1)取向的PZT/LNO电容器，Pr=18μC/cm2，Ec=36 KV/cm。此外，所制得的PZT/LNO薄膜电容器在108次开关循环下也不表现出疲劳。
This paper describes the deposition of PZT/lanthanum nickel oxide (LNO) electrode thin-film capacitor on a Si(100) substrate with a chemical solution deposition (CSD). Highly (100)-oriented LNO film with a perovskite structure was deposited by annealing at 700°C from a precursor solution of La(NO3)3and Ni(CH3COO)2. In addition, highly (100)&(001)-oriented PZT/LNO capacitor was deposited on LNO/Si substrate by annealing at 600°C, showing Pr=18μC/cm2and Ec=36kV/cm. Furthermore, the resultant PZT/LNO thin-film capacitor exhibited no fatigue up to 108switching cycles.