Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
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DOI：
10.1063/1.4879283
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发表时间：
2014-05-19
影响因子：
4
通讯作者：
Boettger, U.
中科院分区：
文献类型：
--
作者：
Starschich, S.;Griesche, D.;Boettger, U.
用化学溶液沉积法制备了剩余极化强度大于13 μ C/cm ~ 2的氧化铪铁电薄膜。制备的样品中，5.2mol.钇掺杂，厚度从18 nm变化到70 nm。使用铂电极将氧化铪层集成到金属-绝缘体-金属电容器中。由于加工过程，没有观察到铁电性能的厚度依赖性。为了确认沉积样品的铁电性质，进行极化、电容和压电位移测量。然而，没有证据的斜方晶相被发现，这已被提出是非中心对称，铁电相HfO 2。(C)2014 AIP Publishing LLC.
Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 mu C/cm(2). The samples were prepared with 5.2mol.% yttrium-doping and the thickness varied from 18nm to 70nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO2. (C) 2014 AIP Publishing LLC.