Micromechanical cantilever magnetometer with an integrated two-dimensional electron system
Micromechanical cantilever magnetometer with an integrated two-dimensional electron system
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DOI：
10.1063/1.126708
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发表时间：
2000-06
影响因子：
4
通讯作者：
M. P. Schwarz;D. Grundler;I. Meinel;C. Heyn;D. Heitmann
中科院分区：
文献类型：
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作者：
M. P. Schwarz;D. Grundler;I. Meinel;C. Heyn;D. Heitmann
我们在分子束外延(MBE)生长的AlGaAs/GaAs异质结中实现了具有集成二维电子系统(2DES)的微机械悬臂梁磁强计。悬臂梁由光刻确定，并选择性地湿法刻蚀到分子束外延生长的阻止层。我们达到了10−13J/T的灵敏度，这使得我们能够在只有0.04cm2面积的2DES中研究德哈斯-范-阿尔芬效应。我们证明，在低温下，均匀填充因子下的振荡幅度相对于单粒子值最大提高了1.8倍。
We have realized a micromechanical cantilever magnetometer with an integrated two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructuregrown by molecular-beam epitaxy(MBE). The cantilever was defined by lithography and wet-etched selectively to a MBE-grown stop layer. We reach a sensitivity of 10 −13 J/T, which enables us to study the de Haas–van Alphen effect in a 2DES of only 0.04 cm 2 area. We demonstrate that, at low temperature, the oscillation amplitude at even filling factors is enhanced by a factor of up to 1.8 with respect to the single-particle value.