Anisotropic etching of surfactant-added TMAH solution
Anisotropic etching of surfactant-added TMAH solution
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添加表面活性剂的TMAH溶液的各向异性蚀刻
DOI：
10.1109/memsys.1999.746904
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
M. Sekimura
中科院分区：
文献类型：
--
作者：
M. Sekimura
研究了添加表面活性剂的四甲基氢氧化铵（TMAH）溶液对硅的各向异性腐蚀特性。发现[110]晶面的蚀刻速率突然降低超过一个数量级，并且[100]晶面的蚀刻速率与[110]晶面的蚀刻速率的蚀刻速率比被反转。表面活性剂的加入改善了[110]晶面刻蚀表面的粗糙度。在车轮图案蚀刻中没有获得特殊的图形。因此，视觉上观察到添加表面活性剂的TMAH溶液的各向异性不同于纯TMAH溶液的各向异性。由于蚀刻速率比的反转，减少了凸角的底切，并且获得了相对于[100]晶面表面成45/spl °/的倾斜[110]晶面。
The anisotropic silicon etching characteristics of surfactant-added tetramethyl ammonium hydroxide (TMAH) solution were investigated. It was found that the etch rate of the [110] crystal plane abruptly decreases by more than one order of magnitude and that the etch rate ratio of the etch rate of the [100] crystal plane to the etch rate of the [110] crystal plane is reversed. The roughness of the etched surface of the [110] crystal plane was improved by the addition of surfactant. A peculiar figure was not obtained at wagon wheel pattern etching. Thus, it was visually observed that the anisotropy of surfactant-added TMAH solution was different from that of pure TMAH solution. As a result of the reversal of the etch rate ratio, undercut of convex corners was reduced and slanted [110] planes at 45/spl deg/ to the surface of the [100] crystal plane were obtained.