Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm ⁄
Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm ⁄
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DOI：
10.1088/1674-1056/18/6/070
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发表时间：
2009-06
影响因子：
1.7
通讯作者：
Xu Hai-yun;Xue Chunlai;Cheng Buwen;Yu Yude;Wang Qi-ming
中科院分区：
文献类型：
--
作者：
Xu Hai-yun;Xue Chunlai;Cheng Buwen;Yu Yude;Wang Qi-ming
采用超高真空/化学气相沉积（UHV/CVD）方法在Si衬底上外延生长了高质量的Ge。本文展示了有效的锗硅p-i-n光电探测器与0.8 μ m锗，与响应高达0.38和0.21 A/W，在1.31和1.55 μ m，分别。在0 V和0.5V的反向偏压下，暗电流密度分别为0.37mA/cm ~ 2和29.4mA/cm ~ 2。探测器直径为30 μ m，在入射波长为1550 nm和零偏压下，3dB带宽为4.72GHz。在反向偏置为3 V时，带宽为6.28 GHz。
High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 mu m, respectively. The dark current density is 0.37 mA/cm(2) and 29.4 mA/cm(2) at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 mu m, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.