Single-domain Si(110)-16 X 2 surface fabricated by electromigration
Single-domain Si(110)-16 X 2 surface fabricated by electromigration
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DOI：
10.1103/physrevb.76.153309
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发表时间：
2007-10-01
影响因子：
3.7
通讯作者：
Shamoto, Shin-ichi
中科院分区：
文献类型：
--
作者：
Yamada, Yoichi;Girard, Antoine;Shamoto, Shin-ichi
用可控表面原子电迁移的方法制备了Si（110）-16x2重构的微米级单畴。当电流方向与重构行的取向相匹配时，发现直流加热过程中的电迁移效应使重构行排成一行。这一发现不仅为Si（110）提供了一种可控的表面制备方法，而且为低维纳米结构的制备提供了另一种模板。
Micrometer-wide single domain of Si(110)-16 x 2 reconstruction has been fabricated by means of controlled electromigration of surface atoms. The electromigration effect in dc heating process is found to line up the reconstruction rows when the current direction matches the orientation of the rows. This finding provides not only a well-controlled surface preparation method for Si(110) but also another template for low-dimensional nanostructures.