Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 um cw and pulse excitation
Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 um cw and pulse excitation
复制标题
嵌入应变弛豫 InGaAs 层中的掺铒 InAs 量子点的光电导性，采用 1.5 um 连续波和脉冲激发
DOI：
10.7567/jjap.55.04eh12
复制
发表时间：
2016
影响因子：
1.5
通讯作者：
and Toshiro Isu
中科院分区：
文献类型：
--
作者：
Keisuke Murakumo,YuyaYamaoka;Naoto Kumagai;Takahiro Kitada;and Toshiro Isu
