Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy
Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy
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DOI：
10.1063/1.2813021
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发表时间：
2007-12-03
影响因子：
4
通讯作者：
Yao, T.
中科院分区：
文献类型：
--
作者：
Park, S. H.;Hanada, T.;Yao, T.
本文报道了用等离子体辅助分子束外延技术在c-Al（2）O（3）衬底上生长ZnO薄膜的晶格弛豫机制。通过原位时间分辨反射高能电子衍射观察和绝对晶格常数测量（Bond法）研究了不同厚度ZnO薄膜的晶格弛豫特性，最大厚度为2000 nm。薄膜中的残余应变解释在生长温度和热应力（张力）由于生长和测量温度的差异的晶格失配弛豫（压缩）。在厚膜（>1 μ m）中，残余拉伸应变开始通过弯曲和微裂纹形成而松弛。(c)2007年，美国物理学会。
We report on the lattice relaxation mechanism of ZnO films grown on c-Al(2)O(3) substrates by plasma-assisted molecular-beam epitaxy. The lattice relaxation of ZnO films with various thicknesses up to 2000 nm is investigated by using both in situ time-resolved reflection high energy electron diffraction observation during the initial growth and absolute lattice constant measurements (Bond method) for grown films. The residual strain in the films is explained in terms of lattice misfit relaxation (compression) at the growth temperature and thermal stress (tension) due to the difference of growth and measurement temperatures. In thick films (>1 mu m), the residual tensile strain begins to relax by bending and microcrack formation. (c) 2007 American Institute of Physics.