Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001)
Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001)
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Ga 通量在 SiC(0001) 上生长的 GaN 薄膜位错减少中的作用
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
L. Salamanca
中科院分区：
文献类型：
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作者：
C. D. Lee;A. Sagar;R. Feenstra;C. K. Inoki;T. Kuan;W. Sarney;L. Salamanca
采用等离子体辅助分子束外延技术在SiC衬底上生长GaN薄膜。（1012）反射的X射线摇摆曲线的宽度对于仅略大于1的Ga/N通量比表现出明显的最小值。与此相关的最低，表面形态有点粗糙，有丘陵和山谷地形。基于透射电子显微照片，摇摆曲线宽度的减少归因于刃位错由于其倾向于聚集在地形谷处而增强的湮灭。
GaN films are grown by plasma-assisted molecular-beam epitaxy on SiC substrates. The width of the x-ray rocking curve for the (1012) reflection exhibits a distinct minimum for Ga/N flux ratios which are only slightly greater than unity. Correlated with this minimum, the surface morphology is somewhat rough, with a hill and valley topography. Based on transmission electron micrographs, the reduction in rocking curve width is attributed to enhanced annihilation of edge dislocations due to their tendency to cluster at topographic valleys.