A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications
A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications
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DOI：
10.1109/iedm.1995.499370
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发表时间：
1995-12
期刊：
影响因子：
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通讯作者：
R. Rios;N. Arora;Chengxiong Huang;N. Khalil;J. Faricelli;L. Gruber
中科院分区：
文献类型：
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作者：
R. Rios;N. Arora;Chengxiong Huang;N. Khalil;J. Faricelli;L. Gruber
我们提出了一个物理的和连续的紧凑MOSFET模型适用于深亚微米器件具有非常薄的栅氧化层厚度。我们专注于一个好的紧凑模型的前提下，应该是基于一个物理的长通道模型，准确地适合I-V和C-V数据。为了满足这一要求，我们发现，该模型必须考虑正确的偏置依赖的表面电位，并包括多晶硅耗尽和量子力学效应。所得到的模型是预测范围内的基本工艺参数，因此适合于统计电路仿真。
We present a physical and continuous compact MOSFET model applicable to deep sub-micron devices with very thin gate oxide thicknesses. We focus on the premise that a good compact model should be based on a physical long-channel model that accurately fits both I-V and C-V data. To meet this requirement, we found that the model must account for the correct bias dependency of the surface potential, and include polysilicon depletion and quantum mechanical effects. The resulting model is predictive within a range of the fundamental process parameters, and is thus suitable for statistical circuit simulations.