Design of an SOI-MEMS high resolution capacitive type single axis accelerometer
Design of an SOI-MEMS high resolution capacitive type single axis accelerometer
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DOI：
10.1007/s00542-010-1146-1
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发表时间：
2010-12
期刊：
影响因子：
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通讯作者：
Kalyan Kumar Mistry;K. Swamy;S. Sen
中科院分区：
文献类型：
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作者：
Kalyan Kumar Mistry;K. Swamy;S. Sen
近年来，高分辨率微加速度计在生活的不同领域得到越来越多的应用。本文主要研究基于SOI-MEMS技术的高分辨率单轴加速度计的设计。提出了两种不同的梳齿电容式SOI-MEMS加速度计的设计方法。最初，系统级的方法，从SABER的仿真平台进行获得的基本设计。随后，通过使用CoventorWare软件的有限元（FE）模拟构建三维（3D）几何模型来进行器件级设计。不同的设计参数，如机械和电气灵敏度，电容值，谐振频率等，在任何一种情况下获得和比较。该设计分别基于电气和机械的总体灵敏度和系统噪声水平进行优化。完整的设计是根据MEMSCAP代工厂的基于绝缘体上硅的多用户MEMS制造工艺（MUMPs）技术制定的。
In recent years, high resolution micro accelerometers are increasingly finding various applications in different segments of life. The current work deals with the design of a high resolution single axis accelerometer based on SOI-MEMS technology. Accordingly two different approaches for designing comb type, capacitive, SOI-MEMS accelerometer is presented. Initially a system level approach using a simulation platform from SABER is carried out to obtain the basic design. Later, a device level design is carried out by building three dimensional (3D) geometric models using finite element (FE) simulations through CoventorWare software. Different design parameters like mechanical and electrical sensitivity, capacitance values, resonant frequency, etc. are obtained in either of the cases and compared. The design is optimized based on the overall sensitivity and the system noise level both electrical and mechanical, respectively. The complete design is worked out in accordance with the silicon on insulator based multiuser MEMS fabrication processes (MUMPs) technology from MEMSCAP foundry.