Observation of large h/2e oscillations in semiconductor antidot lattices.
Observation of large h/2e oscillations in semiconductor antidot lattices.
复制标题
半导体解点晶格中大 h/2e 振荡的观察。
DOI：
10.1103/physrevb.51.4649
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Nakamura
中科院分区：
文献类型：
--
作者：
Nihey;Hwang;Nakamura
我们报告了在人工施加反点晶格势的GaAs-Al x Ga 1− x As异质结构中观察到二维电子气的磁阻的大幅振荡。振荡的周期约为h/2 e作为穿过反点晶格的晶胞的磁通量的函数。在具有六边形晶格配置的反点阵列中，振荡是明确可见的，振幅达到样品电阻的20%，但在具有正方形晶格配置的情况下几乎不可见。我们认为，六方晶格势是适合于电子返回到它们的起始点，并有助于相干背散射。我们还表明，振荡不能描述的扩散制度建立的Al'tshirt，Aronov和Spivak的理论。
We report the observation of large-amplitude oscillations in the magnetoresistance of a two-dimensional electron gas in a GaAs-Al x Ga 1− x As heterostructure with an artificially imposed antidot lattice potential. The period of the oscillations is about h/2e as a function of the magnetic flux threading through the unit cell of the antidot lattice. The oscillations are definitely visible in the antidot array with a hexagonal lattice configuration, the amplitude reaching 20% of the sample resistance, but almost invisible with a square lattice configuration. We believe that the hexagonal lattice potential is suitable for electrons to return to their starting points and to contribute to coherent backscattering. We also show the oscillations cannot be described by the theory for the diffusive regime estalished by Al’tshuler, Aronov, and Spivak.