Comparison on the synchronization of two parallel GaAs photoconductive semiconductor switches excited by laser diodes
Comparison on the synchronization of two parallel GaAs photoconductive semiconductor switches excited by laser diodes
复制标题
激光二极管激励的两个并联GaAs光电导半导体开关的同步比较
DOI：
10.1109/led.2017.2730248
复制
发表时间：
2017
影响因子：
4.9
通讯作者：
Rujun Liu
中科院分区：
文献类型：
--
作者：
Wei Shi;Yu Ji;Ming Xu;Cui Chen;Junjun Shi;Shaoqiang Wang;Rujun Liu
本文研究了GaAs光电导开关在两种电驱动结构下的激光二极管激发同步。通过改变偏置电场和光激发能量对同步进行了比较。在1.2 kV下，光激发能量<inline-formula><tex-math notation="LaTeX">为1.9 μ J时，</tex-math></inline-formula>获得了296 ps的最佳同步。结果表明，同步与谷间瞬态载流子的布居比之间的关系。
In this letter, the synchronization of GaAs photoconductive semiconductor switches in two electrically driven configurations for laser diodes excitation is investigated. Comparisons on the synchronization are carried out by varying the bias electric field and optical excitation energy. The optimum synchronization of 296 ps is achieved at 1.2 kV with optical excitation energy of <inline-formula> <tex-math notation="LaTeX">$1.9~\mu \text{J}$ </tex-math></inline-formula>. The results demonstrate the relationship between the synchronization and transient carriers’ population ratio among the intervalley.