Effect of Grain Boundary/Interface Network on Cavity Growth Due to Atom Migration, Induced by Stress and Electric Current in Polycrystalline LSI Conductor
Effect of Grain Boundary/Interface Network on Cavity Growth Due to Atom Migration, Induced by Stress and Electric Current in Polycrystalline LSI Conductor
复制标题
晶界/界面网络对多晶LSI导体中应力和电流引起的原子迁移引起的空腔生长的影响
DOI：
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复制
发表时间：
2005
期刊：
影响因子：
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通讯作者：
M.Shiratori
中科院分区：
文献类型：
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作者：
T.Shibutani;T.Kitamura;M.Shiratori
