ELECTRICAL-PROPERTIES OF SEMICONDUCTING OXIDE GLASSES
ELECTRICAL-PROPERTIES OF SEMICONDUCTING OXIDE GLASSES
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DOI：
10.1016/0022-3093(79)90066-8
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发表时间：
1979-01-01
影响因子：
3.5
通讯作者：
MACKENZIE, JD
中科院分区：
文献类型：
--
作者：
MURAWSKI, L;CHUNG, CH;MACKENZIE, JD
本文在Mott半导体氧化物玻璃导电理论的框架内，综述了氧化物玻璃导电性的研究。半导体氧化物玻璃的导电过程的检查证实了电输运的极化跳跃模型的适用性。在分相玻璃中观察到了一些偏离Mott理论的现象。传导的热活化能似乎是控制电导率的主导因素，尽管在许多情况下指前因子对电导率也有很大的影响。在随机分布的离子系统中的扩散类传导机制可能不适用于在结构中表现出某种有序性的玻璃，例如成簇。
Studies of the electrical conductivity of semiconducting oxide glasses are reviewed in the framework of Mott's theory for such materials. An examination of the conduction processes in semiconducting oxide glasses confirms the applicability of the polaronic hopping model of electrical transport. Some deviation from Mott's theory are observed in phase-separated glasses. The thermal activation energy for conduction appears to be the dominating factor which controls conductivity, although in many cases the pre-exponential factor also has a great influence on conductivity. The diffusion-like conduction mechanism in a system of randomly distributed ions is probably not applicable to glasses that exhibit some kind of order in the structure, such as clustering.