New measurement-based technique for RF LDMOS nonlinear modeling
New measurement-based technique for RF LDMOS nonlinear modeling
复制标题
用于 RF LDMOS 非线性建模的基于测量的新技术
DOI：
10.1109/75.735416
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
A. Suárez
中科院分区：
文献类型：
--
作者：
J. Collantes;J. J. Raoux;R. Quéré;A. Suárez
在这封信中，一个新的查找表模型的射频（RF）LDMOS晶体管的非线性建模。该建模技术是基于使用的近似样条耦合到一个脉冲的I-V特性设置。它提供了一个非常快速的建模过程，同时避免了在建模函数中出现不希望的波纹。该技术已被应用于L波段应用的RF LDMOS技术，在小信号和大信号晶体管响应的预测中获得了优异的结果。这种技术特别适用于快速发展的技术。
In this letter a new look-up table model is developed for the nonlinear modeling of radio frequency (RF) LDMOS transistors. The modeling technique is based on the use of approximation splines that are coupled to a pulsed I-V characterization setup. It provides a very fast modeling procedure, while avoiding the appearance of undesired ripples in the modeled functions. The technique has been applied to a RF LDMOS technology for L-band applications, obtaining excellent results in the prediction of both the small- and large-signal transistor responses. This technique is specially suitable for fast-evolution technologies.