Complementary Strained Si GAA Nanowire TFET Inverter With Suppressed Ambipolarity
Complementary Strained Si GAA Nanowire TFET Inverter With Suppressed Ambipolarity
复制标题
DOI：
10.1109/led.2016.2582041
复制
发表时间：
2016-08-01
影响因子：
4.9
通讯作者：
Mantl, S.
中科院分区：
文献类型：
--
作者：
Luong, G. V.;Narimani, K.;Mantl, S.
在这封信中，我们提出了基于应变硅的互补隧道场效应晶体管（CTFET），在单芯片上具有围绕纳米线结构的栅极。主要重点是抑制具有栅极-漏极欠重叠的 TFET 的双极性行为。 CTFET 逆变器的详细器件特性分析和演示表明，p 器件和 n 器件的双极电流均已成功消除。 CTFET 反相器传输特性表明，在 V-dd 低至 0.4 V 时，高/低电平具有急剧转变（高电压增益）的最大分离。此外，还获得了所施加 Vdd 的 40% 的高噪声容限水平。
In this letter, we present complementary tunneling field-effect transistors (CTFETs) based on strained Si with gate all around nanowire structures on a single chip. The main focus is to suppress the ambipolar behavior of the TFETs with a gate-drain underlap. Detailed device characterization and demonstration of a CTFET inverter show that the ambipolar current is successfully eliminated for both p-and n-devices. The CTFET inverter transfer characteristics indicate maximum separation of the high/low level with a sharp transition (high voltage gain) at a V-dd down to 0.4 V. In addition, high noise margin levels of 40% of the applied Vdd are obtained.