Wide band gap and p‐type conductive Cu–Nb–O films
Wide band gap and p‐type conductive Cu–Nb–O films
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宽带隙和 p 型导电 Cu-Nb-O 薄膜
DOI：
10.1002/pssr.201105010
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
T. Wada
中科院分区：
文献类型：
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作者：
S. Yamazoe;Shunsuke Yanagimoto;T. Wada
Cu-Nb-O薄膜的厚度约为100 μ m。在硼硅酸盐玻璃衬底上使用CuNbO 3陶瓷靶在500 °C的衬底温度下通过脉冲激光沉积制备150 nm的纳米晶。X射线衍射分析表明，Cu-Nb-O薄膜为非晶态或细小晶体的聚集体。在300 °C下在N2气体中退火后的膜显示出在可见光中80%的透射率（带隙= 2.6eV）和21 S cm-1的高p型电导率。由组成为Cu/Nb = 0.9的靶材制造的厚度为100 nm的Cu-Nb-O膜显示出116 S cm-1的最高p型电导率。（© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Cu–Nb–O films with a thickness of ca. 150 nm were prepared on borosilicate glass substrates using CuNbO3 ceramic target at substrate temperature of 500 °C by pulsed laser deposition. The X‐ray diffraction patterns showed that the Cu–Nb–O films were amorphous or an aggregation of fine crystals. The post‐annealed film at 300 °C in N2 gas showed 80% transmission in visible light (band gap = 2.6 eV) and high p‐type conductivity of 21 S cm–1. The Cu–Nb–O film with a thickness of 100 nm, fabricated from the target with a composition of Cu/Nb = 0.9, showed the highest p‐type conductivity of 116 S cm–1. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)