Upscaling plasma deposition: The influence of technological parameters
Upscaling plasma deposition: The influence of technological parameters
复制标题
DOI：
10.1016/j.surfcoat.2013.12.002
复制
发表时间：
2014-03-15
影响因子：
5.4
通讯作者：
Corbella, Carles
中科院分区：
文献类型：
--
作者：
Corbella, Carles
控制等离子体过程的技术参数遵循几个缩放规则。因此，我们必须使入口气体流量、压力、输入功率和激励频率适应新的反应器尺寸。薄膜沉积或蚀刻率高；等离子体均匀性和再现性是任何升级尝试的主要目标。本文提供了将等离子体沉积工艺从小型中试反应堆转移到大型工业生产工厂的指南。 (C) 2013 Elsevier B.V. 保留所有权利。
The technological parameters that control plasma processes follow several scaling rules. Hence, we must adapt inlet gas flow rate, pressure, input power and excitation frequency to the new reactor dimensions. High rates of film deposition or etching; plasma homogeneity, and reproducibility are the main objectives in any attempt to upscaling. This paper provides guidelines to transfer plasma deposition processes from small pilot reactors to large plants for industrial production. (C) 2013 Elsevier B.V. All rights reserved.